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| GaAs MMIC CF 750 ________________________________________________________________________________________________________ Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) 1 Pin Configuration 2 3 4 D G S Package 1) CF 750 MX Q62702-F1391 GND SOT 143 Circuit diagram: 20k D G S 500 5k 10pF GND Maximum ratings Drain-source voltage Gate-source voltage Drain current Gate-source peak current Channel temperature Storage temperature range Total power dissipat. (TS<48C) 2) Thermal resistance Channel-soldering point (GND) Symbol Unit 8 5 80 2 150 -55 ... +150 300 V V mA mA C C mW VDS -VGS ID +IGSM TCh Tstg Ptot RthChGND 340 K/W 1) For detailed dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point Siemens Aktiengesellschaft pg. 1/6 12.01.96 HL EH PD 21 GaAs MMIC Electrical characteristics DC characteristics Drain-Source Breakdown Voltage ID = 500 A, -VGS=4V CF 750 ________________________________________________________________________________________________________ TA = 25C, unless otherwise specified Symbol VDS(BR) 8 2 2.8 V mA min typ max Unit Drain Current VGGND= 0V, VDS= 3.8 V IDSS,P 1.6 S-pin not connected Drain Current VGS= 0V, VDS= 3.8 V IDSS - 50 - mA S-pin connected to GND Transconductance ID = 10 mA, VDS = 3.8 V S-pin connected to GND gm - 25 - mS Electrical characteristics of CF 750 in Amplifier Application TA = 25 C, VDGND = 3.8V, RS = RL = 50 , unless otherwise specified Amplifier Application Power Gain ID = 2 mA, f = 900 MHz Symbol min typ max Unit GPS 11 1.6 -1 10 10 1.9 -1 9 dB dB dBm dBm dB dB dBm dBm Noise Figure ID = 2 mA, f = 900 MHz F - 3rd Order Intermodulation ID = 2 mA, f = 900 MHz IPIP3 - 3rd Order Intermodulation ID = 2 mA, f = 900 MHz OPIP3 - Power Gain ID = 2 mA, f = 1.8 GHz GPS - Noise Figure ID = 2 mA, f = 1.8 GHz F - 3rd Order Intermodulation ID = 2 mA, f = 1.8 GHz IPIP3 OPIP3 - 3rd Order Intermodulation ID = 2 mA, f = 1.8 GHz Siemens Aktiengesellschaft pg. 2/6 12.01.96 HL EH PD 21 GaAs MMIC Electrical characteristics of CF 750 in Mixer Application TA = 25 C, VDGND = 3.8V, RS = RL = 50 , unless otherwise specified CF 750 ________________________________________________________________________________________________________ Mixer Application Single Sideband Noise Figure f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm Symbol min typ max Unit FSSB - 4.5 - dB Conversion Gain f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm Ga - 15 - dB 3rd Order Intermodulation f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm IPIP3 - -5 - dBm 3rd Order Intermodulation f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm OPIP3 - 10 - dBm Siemens Aktiengesellschaft pg. 3/6 12.01.96 HL EH PD 21 GaAs MMIC Typical Common Source S-Parameters Bias conditions: VDGND= 3.8 V, ID = 2 mA Source-Pad RF-grounded by capacitor with low inductance (< 0.5nH ) ! CF 750 ________________________________________________________________________________________________________ f GHz 0.01 0.1 0.25 0.5 0.75 1.00 1.25 1.5 1.75 2.00 2.25 2.5 2.75 3.00 S11 MAG 0.97 0.97 0.96 0.94 0.91 0.87 0.83 0.87 0.72 0.66 0.61 0.56 0.52 0.49 ANG -1 -3 -8 -16 -26 -34 -42 -49 -57 -65 -73 -81 -87 -93 MAG 1.78 1.78 1.76 1.73 1.70 1.68 1.65 1.62 1.59 1.54 1.51 1.47 1.45 1.42 S21 ANG 179 175 169 155 141 127 118 108 95 82 71 60 52 45 MAG 0.002 0.008 0.015 0.027 0.039 0.046 0.052 0.061 0.066 0.069 0.071 0.073 0.074 0.075 S12 ANG 89 84 78 75 71 64 62 57 55 52 54 60 63 66 MAG 0.98 0.98 0.97 0.95 0.93 0.91 0.89 0.88 0.87 0.86 0.85 0.84 0.83 0.82 S22 ANG -1 -2 -6 -11 -16 -22 -26 -30 -34 -38 -43 -48 -52 -56 Typical Common Source Noise Parameters Bias conditions: VD= 3 V, ID= 2 mA, Z = 50 f MHz 200 450 800 900 1200 1500 1800 1900 opt ( F ) MAG 0.80 0.79 0.68 0.63 0.58 0.54 0.52 0.50 ANG 5 12 23 26 34 42 51 53 Rn 75 60 51 49 45 40 36 35 Rn/50 1.50 1.20 1.02 0.98 0.90 0.80 0.72 0.70 F min dB 1.2 1.2 1.5 1.6 1.7 1.8 1.9 1.9 Siemens Aktiengesellschaft pg. 4/6 12.01.96 HL EH PD 21 GaAs MMIC CF 750 ________________________________________________________________________________________________________ Output characteristics ID = f (VDGND) at nominal operating point; S not connected. VGGND = 0V 2.0 ID [mA] 1.5 -0.6V 1.0 -0.8V -1.0V 0.5 -0.2V -0.4V 0 1 2 3 4 5 6 7 VDGND [V] 8 Output characteristics ID = f (VDS), S connected to GND. 50 VGS=0V 40 ID [mA] VGS=-0.2V 30 VGS=-0.4V 20 VGS=-0.6V 10 VGS=-0.8V VGS=-1.0V 0 0 1 2 3 4 5 V 6 DS 7 [V] 8 Siemens Aktiengesellschaft pg. 5/6 12.01.96 HL EH PD 21 GaAs MMIC Mixer measurement and application circuit ( No. 1) CF 750 ________________________________________________________________________________________________________ + 3.8V 1 nF IF CF 750 D G RF S 1 nF * LO GND * must be high capacitance to ensure good IF grounding at source Amplifier measurement and application circuit (No. 2) + 3.8V 100pF RF CF 750 D G RF S 100 pF GND Siemens Aktiengesellschaft pg. 6/6 12.01.96 HL EH PD 21 |
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